| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXBT16N170A | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -40°C | 150°C | 51 K |
| IXFE36N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFH6N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 118 K |
| IXFT6N100F | 1000V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 118 K |
| MCD26-16N1B | 1600V diode module | distributor | - | 3 | -40°C | 150°C | 127 K |
| MDA72-16N1B | 1600V diode module | distributor | - | 3 | -40°C | 150°C | 126 K |
| MDD44-16N1B | 1600V diode module | distributor | - | 3 | -40°C | 150°C | 125 K |
| MDD56-16N1B | 1600V diode module | distributor | - | 3 | -40°C | 150°C | 128 K |
| MDD72-16N1B | 1600V diode module | distributor | - | 3 | -40°C | 150°C | 126 K |
| MDD95-16N1B | 1600V diode module | distributor | - | 3 | -40°C | 150°C | 123 K |
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