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6N10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTW6N100ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C195 K
NM27C256N100 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--110 K
NM27C256N100 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--110 K
PHD6N10EPowerMOS transistorPhilips-SemiconductorsSOT428---70 K
PHP26N10EPowerMOS transistorPhilips-SemiconductorsSOT78---71 K
STD6N10N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----171 K
STH6N100N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
STH6N100FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
STP16N10LN-CHANNEL 100V - 0.14 OHM - 16A - TO-220 POWER MOS TRANSISTORSGS-Thomson-Microelectronics----50 K
STP16N10LN-CHANNEL 100V - 0.14 OHM - 16A - TO-220 POWER MOS TRANSISTORSGS-Thomson-Microelectronics----50 K
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