Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
MTW6N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 195 K |
NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
NM27C256N100 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
PRN10016N1000J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
PRN10016N1001J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
PRN10016N1002J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
PRN10116N1001J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
STH6N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
STH6N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
1 [2] |
---|