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6N100

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTV6N100ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C262 K
MTW6N100ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C195 K
NM27C256N100 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--110 K
NM27C256N100 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--110 K
PRN10016N1000JIsolated resistor termination networkCalifornia-Micro-DevicesSOIC16-55°C125°C126 K
PRN10016N1001JIsolated resistor termination networkCalifornia-Micro-DevicesSOIC16-55°C125°C126 K
PRN10016N1002JIsolated resistor termination networkCalifornia-Micro-DevicesSOIC16-55°C125°C126 K
PRN10116N1001JBussed resistor networkCalifornia-Micro-DevicesSOIC160°C70°C51 K
STH6N100N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
STH6N100FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----202 K
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