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6N15

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FM27C256N150 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--103 K
FQA46N15150V N-Channel MOSFETFairchild-Semiconductor----759 K
FQB16N15150V N-Channel MOSFETFairchild-Semiconductor----748 K
FQB16N15150V N-Channel MOSFETFairchild-Semiconductor----748 K
FQB46N15150V N-Channel MOSFETFairchild-Semiconductor----769 K
FQB6N15150V N-Channel MOSFETFairchild-Semiconductor----764 K
FQD16N15150V N-Channel MOSFETFairchild-Semiconductor----730 K
FQD6N15150V N-Channel MOSFETFairchild-Semiconductor----757 K
MTW26N15ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C160 K
NM27C256N150 256K-Bit (32K x 8) High Performance CMOS EPROMFairchild-SemiconductorMDIP28--110 K
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