| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB16N25E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 259 K |
| MTD6N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| NM27C256N200 | 256K-Bit (32K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 110 K |
| PRN10016N2001J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10016N22R0J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10116N2001J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N2201J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N2701J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| STP6N25 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 193 K |
| STP6N25FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 193 K |
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