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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB6N60600V N-Channel MOSFETFairchild-Semiconductor----547 K
FQP6N60600V N-Channel MOSFETFairchild-Semiconductor----536 K
FQPF6N60600V N-Channel MOSFETFairchild-Semiconductor----544 K
PHX6N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C69 K
SGP6N60UFUltra-Fast IGBTFairchild-Semiconductor----510 K
SGP6N60UFDUltra-Fast IGBTFairchild-Semiconductor----570 K
SGR6N60UFUltra-Fast IGBTFairchild-Semiconductor----509 K
SGS6N60UFUltra-Fast IGBTFairchild-Semiconductor----530 K
SGS6N60UFDUltra-Fast IGBTFairchild-Semiconductor----590 K
SGU6N60UFUltra-Fast IGBTFairchild-Semiconductor----506 K
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