Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PHB66NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 301 K |
PHB96NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 293 K |
PHD66NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 301 K |
PHD96NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 293 K |
PHD96NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 293 K |
PHP66NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 301 K |
PHP96NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 293 K |
PHP96NQ03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 293 K |
PHT6NQ10T | 100 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 78 K |
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