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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K6T4008U1C-MF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-MF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-MF85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-TF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-TF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-TF85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-VF10512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-VF70512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 70ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008U1C-VF85512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 85ns, LL-powerSamsung-Electronic-32-40°C85°C186 K
K6T4008V1C-GF70512Kx8 bit low voltage CMOS static RAM, Vcc range=3.0-3.6V, 70ns, LL-powerSamsung-ElectronicSOP32-40°C85°C186 K
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