| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHT6N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT223 | - | - | - | 67 K |
| PHT6N06T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT223 | - | - | - | 71 K |
| RFD16N06 | 16.0A, 60V, 0.047 ohm, N-Channel Power MOSFET FN4087.1 | Intersil-Corporation | - | - | - | - | 85 K |
| RFD16N06LE | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 342 K |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 342 K |
| RFD16N06SM | 16.0A, 60V, 0.047 ohm, N-Channel Power MOSFET FN4087.1 | Intersil-Corporation | - | - | - | - | 85 K |
| STP36N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP36N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP36N06L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 204 K |
| STP36N06LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 204 K |
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