| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFH76N06-11 | 60V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 175°C | 80 K |
| IXFH76N06-12 | 60V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 175°C | 80 K |
| MTB36N06E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 278 K |
| MTB36N06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 241 K |
| MTP36N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 188 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHP36N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 51 K |
| PHT6N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 54 K |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 193 K |
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