| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQAF16N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 715 K |
| FQB16N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 752 K |
| FQB6N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 738 K |
| FQD6N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 724 K |
| FQP16N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 736 K |
| FQP6N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 722 K |
| FQPF6N25 | 250V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 734 K |
| MTB16N25E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 259 K |
| STP6N25 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 193 K |
| STP6N25FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 193 K |
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