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6n60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFIB6N60AHEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 AInternational-Rectifier-3-55°C150°C149 K
IXFH26N60Q600V HiPerFET power MOSFET Q-classdistributor-3-55°C150°C107 K
IXFK36N60600V HiPerFET power MOSFETdistributor-3-55°C150°C192 K
IXFN36N60600V HiPerFET power MOSFETdistributor-4-55°C150°C192 K
IXFT26N60Q600V HiPerFET power MOSFET Q-classdistributor-3-55°C150°C107 K
MTB6N60ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C192 K
MTB6N60E1TMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C160 K
MTP6N60N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----153 K
MTP6N60ETMOS E-FET power field effect transistorMotorola-4-55°C150°C156 K
STP6N60FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----151 K
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