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6n60e

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB6N60ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C192 K
MTB6N60E1TMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C160 K
MTP6N60ETMOS E-FET power field effect transistorMotorola-4-55°C150°C156 K
PHB6N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C74 K
PHB6N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4043-55°C150°C75 K
PHP6N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C74 K
PHP6N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsTO220AB3-55°C150°C75 K
PHP6N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT783-55°C150°C75 K
PHX6N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C69 K
PHX6N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT186A3-55°C150°C70 K
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