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6n80

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQA6N80800V N-Channel MOSFETFairchild-Semiconductor----677 K
FQAF6N80800V N-Channel MOSFETFairchild-Semiconductor----661 K
FQB6N80800V N-Channel MOSFETFairchild-Semiconductor----683 K
FQP6N80800V N-Channel MOSFETFairchild-Semiconductor----674 K
FQPF6N80800V N-Channel MOSFETFairchild-Semiconductor----665 K
MTY16N80ETMOS E-FET power field effect transistorMotorola-3-55°C150°C239 K
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