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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH16V7245BATJ-51,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C152 K
MH16V7245BATJ-61,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C152 K
MH16V7245BWJ-51207959552-bit (16777216-word by 72-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C129 K
MH16V7245BWJ-61207959552-bit (16777216-word by 72-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C129 K
MH32V7245BST-52,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C138 K
MH32V7245BST-52415919104-bit (33554432-word by 72-bit) synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C138 K
MH32V7245BST-62,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C138 K
MH32V7245BST-62415919104-bit (33554432-word by 72-bit) synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C138 K
MH8V7245BAZTJ-5603979776-bit (8388608-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C147 K
MH8V7245BAZTJ-6603979776-bit (8388608-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C147 K
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