| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A617308S-10 | 10ns; operating current:150mA; standby current: 12mA 128K x 8bit high speed CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 201 K |
| A617308S-12 | 12ns; operating current:150mA; standby current: 12mA 128K x 8bit high speed CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 201 K |
| A617308S-15 | 15ns; operating current:150mA; standby current: 12mA 128K x 8bit high speed CMOS SRAM | distributor | SOJ | 32 | 0°C | 70°C | 201 K |
| A617308V-15 | 15ns; operating current:150mA; standby current: 12mA 128K x 8bit high speed CMOS SRAM | distributor | TSOP | 32 | 0°C | 70°C | 201 K |
| KS7308 | Frequancy conversion memory | Samsung-Electronic | - | 48 | 0°C | 70°C | 96 K |
| Z86L7308FSC | IR/Low-voltage microcontroller. 8.0 MHz, 32 (KB) ROM, 236 (bytes) RAM, I/O 31, 2.0 V to 3.9 V | distributor | PQFP | 44 | 0°C | 70°C | 599 K |
| Z86L7308FSC | IR/Low-voltage microcontroller. 8.0 MHz, 32 (KB) ROM, 236 (bytes) RAM, I/O 31, 2.0 V to 3.9 V | distributor | PQFP | 44 | 0°C | 70°C | 599 K |
| Z86L7308PSC | IR/Low-voltage microcontroller. 8.0 MHz, 32 (KB) ROM, 236 (bytes) RAM, I/O 31, 2.0 V to 3.9 V | distributor | PDIP | 40 | 0°C | 70°C | 599 K |
| Z86L7308PSC | IR/Low-voltage microcontroller. 8.0 MHz, 32 (KB) ROM, 236 (bytes) RAM, I/O 31, 2.0 V to 3.9 V | distributor | PDIP | 40 | 0°C | 70°C | 599 K |
| Z86L7308VSC | IR/Low-voltage microcontroller. 8.0 MHz, 32 (KB) ROM, 236 (bytes) RAM, I/O 31, 2.0 V to 3.9 V | distributor | PLCC | 44 | 0°C | 70°C | 599 K |
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