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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB3117800BSJ-50 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 178 K |
| HYB3117800BSJ-60 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 178 K |
| HYB3117800BSJ-70 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 260 K |
| HYB5117800BSJ-50 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117800BSJ-60 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| HYB5117800BSJ-70 | 2M x 8bit DRAM | Infineon-formely-Siemens | - | 28 | 0°C | 70°C | 226 K |
| LD242E7800 | GaAs infared emitter | Infineon-formely-Siemens | - | 2 | -40°C | 80°C | 39 K |
| SFH464E7800 | GaAlAs light emmitting diode | Infineon-formely-Siemens | - | 2 | -40°C | 80°C | 40 K |
| SFH482-ME7800 | GaAlAs infrared emitters | Infineon-formely-Siemens | - | 2 | -55°C | 100°C | 66 K |
| SFH483E7800 | GaAs infrared emitter | Infineon-formely-Siemens | - | 2 | -40°C | 80°C | 34 K |
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