| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFH67N10 | 100V, 67A HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 94 K |
| IXFM67N10 | 100V, 67A HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 94 K |
| IXGH17N100 | 3.5V diode | distributor | - | 3 | -55°C | 150°C | 64 K |
| IXGH17N100A | 3.5V diode | distributor | - | 3 | -55°C | 150°C | 64 K |
| IXGM17N100 | 4.0V diode | distributor | - | 4 | -55°C | 150°C | 64 K |
| IXGM17N100A | 4.0V diode | distributor | - | 4 | -55°C | 150°C | 64 K |
| IXGM17N100A | 4.0V diode | distributor | - | 4 | -55°C | 150°C | 64 K |
| MTP27N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 230 K |
| RFD7N10LE | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 361 K |
| RFD7N10LESM | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 361 K |
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