| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB7N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 691 K |
| FQB7N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 569 K |
| FQD7N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 702 K |
| FQD7N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 570 K |
| FQI7N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 691 K |
| FQI7N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 569 K |
| IRFB17N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 194 K |
| IRFS17N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 194 K |
| IRFSL17N20D | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A | International-Rectifier | - | 3 | -55°C | 150°C | 194 K |
| MTP7N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 223 K |
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