| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP7N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 118 K |
| MGP7N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 144 K |
| PHB7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHW7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHX7N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 75 K |
| PHX7N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 75 K |
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