Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXFH7N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 78 K |
IXFK27N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 151 K |
IXFK27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 55 K |
IXFM7N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 78 K |
IXFN27N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 151 K |
IXFN27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | - | 4 | -55°C | 150°C | 108 K |
IXFR27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 55 K |
IXFX27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 55 K |
MGP7N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 122 K |
MTW7N80E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 220 K |
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