Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 94 K |
HGT1S7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 92 K |
HGT1S7N60C3DS | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 176 K |
HGTD7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 92 K |
HGTD7N60C3S | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 144 K |
HGTP7N60B3 | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 92 K |
HGTP7N60B3D | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 94 K |
HGTP7N60C3D | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 176 K |
MGP7N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 118 K |
MGP7N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 144 K |
1 [2] [3] [4] [5] [6] |
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