Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTD7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTG7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTG7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
IRFP27N60K | HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A | International-Rectifier | - | 3 | -55°C | 150°C | 91 K |
IXGA7N60B | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 70 K |
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