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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGT1S7N60A4DS600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----134 K
HGT1S7N60A4S600V, SMPS Series N-Channel IGBTIntersil-Corporation----168 K
HGT1S7N60A4S600V, SMPS Series N-Channel IGBTIntersil-Corporation----168 K
HGTD7N60A4S600V, SMPS Series N-Channel IGBTIntersil-Corporation----168 K
HGTG7N60A4600V, SMPS Series N-Channel IGBTIntersil-Corporation----168 K
HGTG7N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----134 K
HGTP7N60A4600V, SMPS Series N-Channel IGBTIntersil-Corporation----168 K
HGTP7N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil-Corporation----134 K
IRFP27N60KHEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 AInternational-Rectifier-3-55°C150°C91 K
IXGA7N60B600V HiPerFET power MOSFETdistributor-3-55°C150°C70 K
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