| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S7N60C3DS | TRANSISTOR.IGBT TO-263 | Fairchild-Semiconductor | - | - | - | - | 197 K |
| HGTD7N60C3S | TRANSISTOR IGBT | Fairchild-Semiconductor | - | - | - | - | 153 K |
| IXGA7N60C | 600V HiPerFET power IGBT | distributor | - | 3 | -55°C | 150°C | 50 K |
| IXGA7N60CD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 52 K |
| IXGP7N60B | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 70 K |
| IXGP7N60C | 600V HiPerFET power IGBT | distributor | - | 3 | -55°C | 150°C | 50 K |
| IXGP7N60CD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 52 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| SSP7N60B | 600V, 7A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 915 K |
| SSS7N60B | 600V, 7A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 915 K |
| [1] [2] 3 [4] [5] [6] |
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