| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQA7N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 581 K |
| FQB7N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 591 K |
| FQB7N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 591 K |
| FQI7N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 591 K |
| PHB7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHW7N60 | 600 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 56 K |
| PHW7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| SSS7N60 | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 280 K |
| SSS7N60A | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 320 K |
| [1] [2] [3] 4 [5] [6] |
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