Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGT1S7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTD7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTG7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTG7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
SSS7N60A | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 320 K |
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