| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| L88016 | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 4 | -65°C | 150°C | 35 K |
| Q8016LH3 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016LH4 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016LH6 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016NH3 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016NH4 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016NH6 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016RH3 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016RH4 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8016RH6 | 800 V, 16 A alternistor triac | distributor | - | 3 | -40°C | 125°C | 2 M |
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