| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM80814-005 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 72 K |
| AM80814-025 | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 56 K |
| S-80810ANNP-E70-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
| S-80811ANNP-E71-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
| S-80812ANNP-E72-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
| S-80813ANNP-EDA-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
| S-80814ANNP-EDB-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -20°C | 70°C | 1 M |
| S-80815ANNP-EDC-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| S-80816ANNP-EDD-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| XP08081 | Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| 1 [2] [3] |
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