| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N2811B | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 116 K |
| AIC1811BCV | Overcharge protection voltage: 4.30V; one-cell lithium-lon battery protection IC | distributor | - | 5 | 0°C | 70°C | 118 K |
| AME8811BEAT | Output voltage: 3.0V; 300mA CMOS LDO | distributor | - | 3 | -40°C | 85°C | 132 K |
| AME8811BEFT | Output voltage: 3.0V; 300mA CMOS LDO | distributor | - | 3 | -40°C | 85°C | 132 K |
| K4F640811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F640811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-50 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| TAM25-4811B | 25 Watt, input voltage range:36-72V, output voltage 5V (5A) DC/DC converter | distributor | DIP | 10 | -25°C | 85°C | 69 K |
| 1 [2] [3] |
|---|
