| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB3118160BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| HYB3118160BST-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| HYB3118160BST-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 258 K |
| IRHNA8160 | HEXFET transistor | International-Rectifier | SMD2 | 2 | -55°C | 150°C | 161 K |
| MSM5118160A-50TS-K | 1,048,576-word x 16-bit dynamic RAM | distributor | TSOP | 50 | 0°C | 70°C | 605 K |
| MSM5118160A-60JS | 1,048,576-word x 16-bit dynamic RAM | distributor | SOJ | 42 | 0°C | 70°C | 605 K |
| MSM5118160A-60TS-K | 1,048,576-word x 16-bit dynamic RAM | distributor | TSOP | 50 | 0°C | 70°C | 605 K |
| MSM5118160A-70JS | 1,048,576-word x 16-bit dynamic RAM | distributor | SOJ | 42 | 0°C | 70°C | 605 K |
| MSM5118160A-80JS | 1,048,576-word x 16-bit dynamic RAM | distributor | SOJ | 42 | 0°C | 70°C | 605 K |
| UT8160 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | C_STUD | - | - | - | 140 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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