| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S281632M-TC/L10 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| K4S281632M-TC/L1H | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| K4S281632M-TC/L1L | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| K4S281632M-TC/L80 | 2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 87 K |
| UPC8163TB | Frequency up-converter IC | NEC-Electronics-Inc- | - | - | - | - | 133 K |
| UPC8163TB-E3 | Frequency up-converter IC | NEC-Electronics-Inc- | - | - | - | - | 133 K |
| UPD45128163G5-A10-9JF | 128M-bit(2M-word x 16-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD45128163G5-A10B-9JF | 128M-bit(2M-word x 16-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD45128163G5-A80-9JF | 128M-bit(2M-word x 16-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| VSC8163QR | OC-48 16:1 SONET/SDH Mux with clock generator | distributor | PQFP | 128 | 0°C | 85°C | 191 K |
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