| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N2817A | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 116 K |
| 2SA817A | Silicon PNP transistor for driver stage amplifier and voltage amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 150 K |
| H11A817A | Optocoupler. Phototransistor Output; GaAs Input (No base connection) | distributor | - | 4 | - | - | 30 K |
| MB89P817APF | 8-bit proprietary microcontroller | Fujitsu-Microelectronis | plastic QFP | 64 | -40°C | 85°C | 171 K |
| S-2817ACA-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | Chip | - | -40°C | 85°C | -- |
| S-2817ADP-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | DIP | 28 | -40°C | 85°C | -- |
| S-2817AFE-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | SOP | 28 | -40°C | 85°C | -- |
| S-2817ATF-150 | CMOS 16K-bit parallel E2PROM | Seiko-Epson-Corporation | TSOP | 28 | -40°C | 85°C | -- |
| S-80817ALNP-EAE-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| S-80817ANNP-EDE-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| 1 [2] [3] |
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