| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 8550 | PNP epitaxial silicon planar transistor | distributor | - | 3 | - | - | 76 K |
| C8550 | Transistor. 2W output amplifier of portable radios in class B push-pull operation. Vcbo = -40V, Vceo = -25V, Vebo = -6V, Ic = -1.5A, Pc = 1W. | distributor | - | 3 | 0°C | 150°C | 47 K |
| LB1855NM | 3-phase brushless motor driver | SANYO-Electric-Co--Ltd- | MFP16FS | 16 | -20°C | 75°C | 79 K |
| M65855FP | Digital echo with microphone mixing amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 16 | -20°C | 75°C | 58 K |
| S8550 | Transistor(PNP). Power dissipation 0.625W, Collector current -0.5A. Collector-base voltage -40V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 86 K |
| S8550LT1 | High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 85 K |
| TK65855STL | 5.5V CMOS LDO regulator with high active control | distributor | SOT23 | 5 | -30°C | 80°C | 35 K |
| VTP8551 | Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | distributor | Mini DIP | 2 | -40°C | 85°C | 26 K |
| XPC855TZP50D4 | Quad integrated communications controller, 10/100 Mbps, 50 MHz | Motorola | BGA | 357 | 0°C | 95°C | 857 K |
| XPC855TZP66D4 | Quad integrated communications controller, 10/100 Mbps, 66 MHz | Motorola | BGA | 357 | 0°C | 95°C | 857 K |
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