| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 8550 | PNP epitaxial silicon planar transistor | distributor | - | 3 | - | - | 76 K |
| C8550 | Transistor. 2W output amplifier of portable radios in class B push-pull operation. Vcbo = -40V, Vceo = -25V, Vebo = -6V, Ic = -1.5A, Pc = 1W. | distributor | - | 3 | 0°C | 150°C | 47 K |
| FAR-F6CE-1G8550-L2TB-U | Piezoelectric SAW BPF (1000 to 2500 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 428 K |
| HA8550S | 5V 700mA PNP epitaxial planar transistor for general purpose amplifier applications | distributor | - | 3 | - | - | 39 K |
| HE8550 | 40V 500mA PNP epitaxial planar transistor for use in 2W output amplifier | distributor | - | 3 | - | - | 36 K |
| HE8550S | 25V 700mA PNP epitaxial planar transistor for general purpose amplifier applications | distributor | - | 3 | - | - | 36 K |
| HMBT8550 | Emitter to base voltage:5V; 700mA PNP epitaxial planar transistor for general purpose amplifier applications | distributor | - | 3 | - | - | 30 K |
| S8550 | Transistor(PNP). Power dissipation 0.625W, Collector current -0.5A. Collector-base voltage -40V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 86 K |
| S8550LT1 | High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 85 K |
| T720085504DN | 800V, 550A phase control single thyristor | distributor | - | - | - | - | 720 K |
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