Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 54 | 0°C | 100°C | 306 K |
K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 54 | 0°C | 100°C | 306 K |
K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
K4R881869M-NCK7 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
K4R881869M-NCK8 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
MAX3869E/D | +3.3V, 2.5Gbps, SDH/SONET, laser driver with gurrent monitor and APC. | Maxim-Integrated-Producs | Dice | - | -40°C | 85°C | 468 K |
MAX3869EHJ | +3.3V, 2.5Gbps, SDH/SONET, laser driver with gurrent monitor and APC. | Maxim-Integrated-Producs | - | 32 | -40°C | 85°C | 468 K |
MAX869LC/D | 2A, current-limited, high-side P-channel switch with thermal shutdown | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 90 K |
<< [4] [5] [6] [7] [8] 9 [10] [11] [12] [13] [14] >> |
---|