| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R881869M-NCG6 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
| K4R881869M-NCK7 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
| K4R881869M-NCK8 | 512K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung-Electronic | microBGA(normal CSP) | 56 | 0°C | 100°C | 3 M |
| LC7233N-8818 | Single-chip PLL and controller with LCD driver | SANYO-Electric-Co--Ltd- | QIP64E | 64 | -40°C | 85°C | 833 K |
| UZ8818 | Zener Voltage Regulator Diode | Microsemi-Corporation | A | - | - | - | 91 K |
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