| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CXP88216 | CMOS 8-bit Single Chip Microcomputer | Sony-Semiconductor | - | - | - | - | 478 K |
| GS88218B-100 | 100MHz 12ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
| GS88218B-11 | 100MHz 11ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
| GS88218B-11.5 | 100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
| GS88218B-66 | 66MHz 18ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
| GS88218B-66I | 66MHz 18ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS88218B-80 | 80MHz 14ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
| KB8821 | Frequency synthesizer | Samsung-Electronic | QFN | 24 | -40°C | 85°C | 237 K |
| KB8821 | Frequency synthesizer | Samsung-Electronic | - | 20 | -40°C | 85°C | 237 K |
| L8821P | 5 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 8 | -65°C | 150°C | 40 K |
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