| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL16V8D-20LR/883 | High performance E2CMOS PLD generic array logic, 20ns | Lattice-Semiconductor-Corporation | LCC | 20 | -55°C | 125°C | 108 K |
| GAL16V8D-20QJI | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | -40°C | 85°C | 316 K |
| GAL16V8D-20QPI | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | -40°C | 85°C | 316 K |
| GS8161Z18D-200I | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
| GS816218D-200 | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 956 K |
| GS816218D-200I | 6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 956 K |
| GS8162Z18D-200 | 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | 0°C | 70°C | 901 K |
| GS8162Z18D-200I | 200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | BGA | 165 | -40°C | 85°C | 901 K |
| GS8180Q18D-200 | 200MHz 1M x 18 18MB sigmaQuad SRAM | distributor | BGA | 165 | 0°C | 70°C | 674 K |
| GS8180Q18D-200I | 200MHz 1M x 18 18MB sigmaQuad SRAM | distributor | BGA | 165 | -40°C | 85°C | 674 K |
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