| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFB18N50K | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A | International-Rectifier | - | 3 | -55°C | 150°C | 83 K |
| IXFK48N50 | 500V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 93 K |
| IXFK48N50Q | 500V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 48 K |
| IXFN48N50 | 500V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 93 K |
| IXFN48N50U2 | 500V HiPerFET power MOSFET | distributor | - | 4 | -40°C | 150°C | 151 K |
| IXFN48N50U2 | 500V HiPerFET power MOSFET | distributor | - | 4 | -40°C | 150°C | 151 K |
| IXFN48N50U3 | 500V HiPerFET power MOSFET | distributor | - | 4 | -40°C | 150°C | 151 K |
| IXFX48N50Q | 500V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 48 K |
| MTB8N50E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 162 K |
| MTP8N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 158 K |
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