| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB8N50E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 162 K |
| MTP8N50E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 158 K |
| PHB8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 90 K |
| PHW8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHX8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
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