Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FQA8N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 693 K |
FQAF8N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 689 K |
IXFH8N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 206 K |
STH8N80 | Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 345 K |
STH8N80FI | Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R | SGS-Thomson-Microelectronics | - | - | - | - | 345 K |
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