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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
9014NPN silicon transistor. Power dissipation 0.4W (Tamb=25deg.C). Collector current 0.1A. Collector-base voltage 50V.Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors-3--27 K
IRFD9014HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -1.1 AInternational-Rectifier-4-55°C175°C177 K
IRFL9014HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -1.8AInternational-Rectifier-3-55°C150°C222 K
IRFR9014HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1AInternational-Rectifier-3-55°C150°C177 K
IRFR9014HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1AInternational-Rectifier-3-55°C150°C177 K
KTC9014NPN transistor for general purpose and switching applicationsKorea-Electronics-Co--Ltd--3-55°C150°C120 K
PST9014System resetdistributor-3-20°C75°C65 K
PST9014NSystem resetdistributor-5-20°C75°C65 K
S3C90148-bit single-chip CMOS microcontroller.Samsung-Electronic-40-40°C85°C162 K
S3P90148-bit single-chip CMOS microcontroller. OTP version.Samsung-Electronic-40-40°C85°C162 K
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