| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA9015 | Low frequency, low noise amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 450mW. Collector current Ic = -100mA. | distributor | - | 3 | 0°C | 150°C | 86 K |
| 74HC/HCT9015 | Nine wide schmitt trigger buffer/line driver | Philips-Semiconductors | DIP | 20 | -40°C | 85°C | 41 K |
| D2587P9015 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 190.15 THz. Center wavelength 1576.61 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| GS9015ACTJ | Serial digital reclocker | Gennum-Corporation | PLCC Tape | 28 | 0°C | 70°C | 138 K |
| HE9015 | 50V 100mA PNP epitaxial planar transistor for use in pre-amplifier of low level and low noise | distributor | - | 3 | - | - | 38 K |
| HN9015 | 30 V, PNP silicon expitaxial planar transistor | distributor | - | 3 | - | - | 365 K |
| LM79015CT | Terminal negative regulators, out voltage -15V | distributor | - | 3 | 0°C | 125°C | 167 K |
| PJ2N9015CT | 50V; 100mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 188 K |
| PJ2N9015CX | 50V; 100mA PNP epitaxial silicon transistor | distributor | - | 3 | -20°C | 85°C | 188 K |
| SS9015 | NPN transsistor for low frequency, low noise amplifier, 50V | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 65 K |
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