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962L

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962L0153201QYA1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).distributorCFP44-40°C125°C95 K
5962L0153201QYA1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).distributorCFP44-40°C125°C95 K
5962L0153201TYA1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).distributorCFP44-40°C125°C95 K
5962L0153201TYC1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).distributorCFP44-40°C125°C95 K
5962L0153201TYX1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).distributorCFP44-40°C125°C95 K
5962L8771002QGALow Power Dual Operational Amplifierdistributor-8--476 K
5962L8771002QPALow Power Dual Operational AmplifierdistributorCerdip8--476 K
5962L8771002VGALow Power Dual Operational Amplifierdistributor-8--476 K
5962L8771002VPALow Power Dual Operational AmplifierdistributorCerdip8--476 K
M57962LHybrid IC for driving IGBT modulesMitsubishi-Electric-Corporation-Semiconductor-Group-14-20°C60°C24 K
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