| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQA19N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 545 K |
| FQAF19N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 526 K |
| IRFB9N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A | International-Rectifier | - | 3 | -55°C | 150°C | 135 K |
| IRFB9N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A | International-Rectifier | - | 3 | -55°C | 150°C | 102 K |
| IXGH39N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 63 K |
| IXGH39N60BS | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 63 K |
| IXGR39N60B | 600V HiPerFAST IGBT | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 92 K |
| IXGR39N60BD1 | 600V HiPerFAST IGBT | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 92 K |
| PHP9N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 41 K |
| PHW9N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 102 K |
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