| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AN79N10 | 3-pin Negative Output Voltage Regulator (300mA Type) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 63 K |
| FQB19N10 | 100V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 575 K |
| FQB19N10L | 100V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 609 K |
| FQD19N10 | 100V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 588 K |
| FQD19N10L | 100V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 623 K |
| IRFB59N10D | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A | International-Rectifier | - | 3 | -55°C | 175°C | 138 K |
| IRFS59N10D | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 138 K |
| MTD9N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 257 K |
| STD9N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 129 K |
| STD9N10L | N-CHANNEL 100V - 0.22 OHM - 9A IPAK/DPAK POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 66 K |
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