Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
IRF9Z24L | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A | International-Rectifier | - | 3 | -55°C | 175°C | 311 K |
IRF9Z24N | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A | International-Rectifier | - | 3 | -55°C | 175°C | 109 K |
IRF9Z24NL | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A | International-Rectifier | - | 3 | -55°C | 175°C | 168 K |
IRF9Z24NS | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 168 K |
IRF9Z24S | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 311 K |
SFI9Z24 | P-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 280 K |
SFP9Z24 | P-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 231 K |
SFS9Z24 | P-CHANNEL POWER MOSFET | Fairchild-Semiconductor | - | - | - | - | 280 K |
SFW9Z24 | Advanced Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 280 K |
1 |
---|