| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2PA1015 | PNP general purpose transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 46 K |
| 2PA1015 | PNP general purpose transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 46 K |
| 2SA1015 | Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. | distributor | - | 3 | 0°C | 125°C | 99 K |
| HSA1015 | Emitter to base voltage:5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification | distributor | - | 3 | - | - | 35 K |
| TDA1015 | 1-4 W audio power amplifier | Philips-Semiconductors | SIL | 9 | -25°C | 150°C | 251 K |
| TDA1015T | 0.5 W audio power amplifier | Philips-Semiconductors | SO | 8 | -25°C | 150°C | 75 K |
| UMA1015AM | Low-power dual frequency synthesizer for radio communications. | Philips-Semiconductors | SSOP20 | 20 | -30°C | 85°C | 171 K |
| UMA1015AM | Low-power dual frequency synthesizer for radio communications | Philips-Semiconductors | - | 20 | -30°C | 85°C | 129 K |
| UMA1015M/C2 | Low-power dual frequency synthesizer for radio communications | Philips-Semiconductors | SSOP | 20 | -30°C | 85°C | 229 K |
| UMA1015M/C2 | Low-power dual frequency synthesizer for radio communications | Philips-Semiconductors | SSOP | 20 | -30°C | 85°C | 229 K |
| UMA1015M/C2 | Low-power dual frequency synthesizer for radio communications | Philips-Semiconductors | - | 20 | -30°C | 85°C | 229 K |
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