| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1016 | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 127 K |
| 2SA1016K | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 127 K |
| TDA1016 | 2 W audio power amplifier | Philips-Semiconductors | DIL | 16 | -25°C | 150°C | 58 K |
| UMA1016AT | Frequency synthesizer for radio communication equipment. | Philips-Semiconductors | - | 16 | -10°C | 70°C | 85 K |
| UMA1016BT | Frequency synthesizer for radio communication equipment. | Philips-Semiconductors | - | 16 | -10°C | 70°C | 85 K |
| UMA1016BT | Frequency synthesizer for radio communication equipment. | Philips-Semiconductors | SO | 16 | -10°C | 70°C | 85 K |
| UMA1016BT | Frequency synthesizer for radio communication equipment. | Philips-Semiconductors | SO | 16 | -10°C | 70°C | 85 K |
| UMA1016xT | Frequency synthesizer for radio communication equipment. | Philips-Semiconductors | - | 16 | -10°C | 70°C | 85 K |
| UMA1016xT | Frequency synthesizer for radio communication equipment. | Philips-Semiconductors | SO | 16 | -10°C | 70°C | 85 K |
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