| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1207 | PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 108 K |
| 2SA1208 | PNP epitaxial planar silicon transistor, high-voltage switching, audio 80W output predriver application | SANYO-Electric-Co--Ltd- | 2006A | 3 | - | - | 107 K |
| 2SA1252 | PNP epitaxial planar silicon transistor, for AF application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 106 K |
| KRA120M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (10 and 4.7 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 178 K |
| KRA120S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (10 and 4.7 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
| KRA121M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (47 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 178 K |
| KRA121S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (47 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
| KRA122M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (100 and 100 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 178 K |
| SA12B5 | SCHOTTKY ARRAYS - (ASD) | SGS-Thomson-Microelectronics | - | - | - | - | 58 K |
| STTA1212D | TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE | SGS-Thomson-Microelectronics | - | - | - | - | 67 K |
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